features z ideally suited for automatic insertion z for switching and af amplifier applications maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage bc846 bc847 bc848 80 50 30 v v ceo collector-emitter voltage bc846 bc847 bc848 65 45 30 v v ebo emitter-base voltage 6 v i c collector current ?continuous 0.1 a p c* collector power dissipation 200 mw t j junction temperature 150 t stg storage temperature -65-150 device marking bc846a=1a; bc846b=1b; BC847A=1e; bc847b=1f; bc847c=1g; bc848a=1j; bc848b=1k: bc848c=1l so t -23 1. base 2. emitter 3. collector transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu bc846a,b / BC847A, b, c / bc848a, b, c
electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bc846 bc847 bc848 v cbo i c = 10a, i e =0 80 50 30 v collector-emitter breakdown voltage bc846 bc847 bc848 v ceo i c = 10ma, i b =0 65 45 30 v emitter-base breakdown voltage v ebo i e = 10a, i c =0 6 v collector cut-off current bc8 4 6 bc8 4 7 bc8 4 8 i cbo v cb =70 v , i e =0 v cb =50 v , i e =0 v cb =30 v , i e =0 0.1 a collector cut-off current bc8 4 6 bc8 4 7 bc8 4 8 i ceo v ce =60 v , i b =0 v ce =45 v , i b =0 v ce =30 v , i b =0 0.1 a emitter cut-off current i ebo v eb =5 v , i c =0 0.1 a dc current gain bc846a,847a,848a bc846b,847b,848b bc847c,bc848c h fe v ce = 5v, i c = 2ma 110 200 420 220 450 800 collector-emitter saturation voltage v ce (sat) i c =100ma, i b = 5ma 0.5 v base-emitter saturation voltage v be (sat) i c =100ma, i b = 5ma 1.1 v transition frequency f t v ce = 5 v, i c = 10ma f= 100mhz 100 mhz collector output capacitance c ob v cb =10v,f= 1 mhz 4.5 pf 2 date:2011/05 www.htsemi.com semiconductor jinyu bc846a,b / BC847A, b, c / bc848a, b, c
3 date:2011/05 www.htsemi.com semiconductor jinyu typical characteristics bc846a,b / BC847A, b, c / bc848a, b, c
4 date:2011/05 www.htsemi.com semiconductor jinyu bc846a,b / BC847A, b, c / bc848a, b, c
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